WMM80N08TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM80N08TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 133 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 68.7 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO263
WMM80N08TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM80N08TS Datasheet (PDF)
wmm80n08ts.pdf
WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. GSFeatures TO-263 V = 80V, I = 80A DS DR
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wmm80p04ts.pdf
WMM80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMM80P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance.GSFeatures TO-263 V = -40V, I = -80A DS DR
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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