WMM80N08TS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMM80N08TS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 133 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 220 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: TO263
Аналог (замена) для WMM80N08TS
WMM80N08TS Datasheet (PDF)
wmm80n08ts.pdf

WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. GSFeatures TO-263 V = 80V, I = 80A DS DR
wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST
wmm80r1k5s wmn80r1k5s wmk80r1k5s wml80r1k5s wmp80r1k5s wmo80r1k5s.pdf

WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
Другие MOSFET... WMK13N50C4 , WMM161N15T2 , WMM180N03TS , WMM190N03TS , WMM220N20HG3 , WMM240P10HG4 , WMM340N20HG2 , WMM50P04T1 , IRFP250N , WMM80P04TS , WMM80R1K0S , WMN80R1K0S , WMK80R1K0S , WML80R1K0S , WMP80R1K0S , WMO80R1K0S , WMM80R1K5S .
History: SSF22A5E | AP0903GM | SWD062R68E7T | HSM4606 | SSM9575 | BFW10 | IRF5850
History: SSF22A5E | AP0903GM | SWD062R68E7T | HSM4606 | SSM9575 | BFW10 | IRF5850



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