WMM90N08TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM90N08TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 135.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 111 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263
WMM90N08TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM90N08TS Datasheet (PDF)
wmm90n08ts.pdf
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WMM90N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM90N08TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. STO-263Features V = 80V, I = 90A DS D R
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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