Справочник MOSFET. WMM90N08TS

 

WMM90N08TS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMM90N08TS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 135.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 111 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO263

 Аналог (замена) для WMM90N08TS

 

 

WMM90N08TS Datasheet (PDF)

 ..1. Size:1126K  way-on
 wmm90n08ts.pdf

WMM90N08TS WMM90N08TS

WMM90N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM90N08TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. STO-263Features V = 80V, I = 90A DS D R

 9.1. Size:658K  way-on
 wml90r360s wmk90r360s wmn90r360s wmm90r360s wmj90r360s.pdf

WMM90N08TS WMM90N08TS

WML90R MK90R360R360S, WM 0S WMN , WMM90R MJ90R360N90R360S, R360S, WM 0S 900V 0.28 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i

 9.2. Size:656K  way-on
 wml90r260s wmk90r260s wmn90r260s wmm90r260s wmj90r260s.pdf

WMM90N08TS WMM90N08TS

WML90R MK90R260R260S, WM 0S WMN , WMM90R MJ90R260N90R260S, R260S, WM 0S 900V 0.23 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is

 9.3. Size:668K  way-on
 wmm90r1k5s wmn90r1k5s wmk90r1k5s wml90r1k5s wmp90r1k5s wmo90r1k5s.pdf

WMM90N08TS WMM90N08TS

WMM9 1K5S, WM 5S 90R1K5S, WMN90R1 MK90R1K5WML9 1K5S, WM 5S 90R1K5S, WMP90R1 MO90R1K5 900V 1.28 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

 9.4. Size:675K  way-on
 wml90r500s wmo90r500s wmk90r500s wmn90r500s wmm90r500s wmj90r500s .pdf

WMM90N08TS WMM90N08TS

WML R500S, WM 0S L90R500S, WMO90R MK90R500WMN , WMM90R MJ90R500N90R500S, R500S, WM 0S 900V 0.41 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan

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History: IXTQ200N06P

 

 
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