WMM90N08TS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMM90N08TS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 135.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 270 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO263
Аналог (замена) для WMM90N08TS
WMM90N08TS Datasheet (PDF)
wmm90n08ts.pdf

WMM90N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM90N08TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. STO-263Features V = 80V, I = 90A DS D R
wml90r360s wmk90r360s wmn90r360s wmm90r360s wmj90r360s.pdf

WML90R MK90R360R360S, WM 0S WMN , WMM90R MJ90R360N90R360S, R360S, WM 0S 900V 0.28 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i
wml90r260s wmk90r260s wmn90r260s wmm90r260s wmj90r260s.pdf

WML90R MK90R260R260S, WM 0S WMN , WMM90R MJ90R260N90R260S, R260S, WM 0S 900V 0.23 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is
wmm90r1k5s wmn90r1k5s wmk90r1k5s wml90r1k5s wmp90r1k5s wmo90r1k5s.pdf

WMM9 1K5S, WM 5S 90R1K5S, WMN90R1 MK90R1K5WML9 1K5S, WM 5S 90R1K5S, WMP90R1 MO90R1K5 900V 1.28 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
Другие MOSFET... WMP80R1K5S , WMO80R1K5S , WMM80R720S , WMN80R720S , WMK80R720S , WML80R720S , WMP80R720S , WMO80R720S , IRF9540N , WMM90R1K5S , WMN90R1K5S , WMK90R1K5S , WML90R1K5S , WMP90R1K5S , WMO90R1K5S , WMM95P06TS , WMMB020N10HG4 .
History: SDF03N80 | STFI13NM60N | 2SK1796 | WMO07N65C4 | HFW50N06 | SE10030A | TK100A10N1
History: SDF03N80 | STFI13NM60N | 2SK1796 | WMO07N65C4 | HFW50N06 | SE10030A | TK100A10N1



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