All MOSFET. WMM95P06TS Datasheet

 

WMM95P06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM95P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 162.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58.4 nC
   trⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO263

 WMM95P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM95P06TS Datasheet (PDF)

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 wmm95p06ts.pdf

WMM95P06TS WMM95P06TS

WMM95P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMM95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures GS V = -60V, I = -95A DS D TO-263R

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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