WMM95P06TS Specs and Replacement
Type Designator: WMM95P06TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 162.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 670 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO263
WMM95P06TS substitution
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WMM95P06TS datasheet
wmm95p06ts.pdf
WMM95P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMM95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features G S V = -60V, I = -95A DS D TO-263 R ... See More ⇒
Detailed specifications: WMO80R720S, WMM90N08TS, WMM90R1K5S, WMN90R1K5S, WMK90R1K5S, WML90R1K5S, WMP90R1K5S, WMO90R1K5S, IRFB3607, WMMB020N10HG4, WMN22N50C4, WMM22N50C4, WMJ22N50C4, WMO22N50C4, WMK22N50C4, WML22N50C4, WMO030N06HG4
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