All MOSFET. WMM95P06TS Datasheet

 

WMM95P06TS Datasheet and Replacement


   Type Designator: WMM95P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 162.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO263
 

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WMM95P06TS Datasheet (PDF)

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WMM95P06TS

WMM95P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMM95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures GS V = -60V, I = -95A DS D TO-263R

Datasheet: WMO80R720S , WMM90N08TS , WMM90R1K5S , WMN90R1K5S , WMK90R1K5S , WML90R1K5S , WMP90R1K5S , WMO90R1K5S , IRFB3607 , WMMB020N10HG4 , WMN22N50C4 , WMM22N50C4 , WMJ22N50C4 , WMO22N50C4 , WMK22N50C4 , WML22N50C4 , WMO030N06HG4 .

History: WMO060N10HGS | AM3412N

Keywords - WMM95P06TS MOSFET datasheet

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