All MOSFET. WMMB020N10HG4 Datasheet

 

WMMB020N10HG4 Datasheet and Replacement


   Type Designator: WMMB020N10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 277.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 238 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 2190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO263-7L
 

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WMMB020N10HG4 Datasheet (PDF)

 ..1. Size:1093K  way-on
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WMMB020N10HG4

WMMB020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMMB020N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SSSSSThis device is well suited for high efficiency fast switching applications. GTO-263-7LFeatures

Datasheet: WMM90N08TS , WMM90R1K5S , WMN90R1K5S , WMK90R1K5S , WML90R1K5S , WMP90R1K5S , WMO90R1K5S , WMM95P06TS , IRLZ44N , WMN22N50C4 , WMM22N50C4 , WMJ22N50C4 , WMO22N50C4 , WMK22N50C4 , WML22N50C4 , WMO030N06HG4 , WMO030N06LG4 .

History: B4N65 | MTDN8810T8 | STB15NK50ZT4 | NCE2004Y | GWM13S65YRY | IPL65R650C6S

Keywords - WMMB020N10HG4 MOSFET datasheet

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