All MOSFET. WMMB020N10HG4 Datasheet

 

WMMB020N10HG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMMB020N10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 277.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 238 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 123.4 nC
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 2190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO263-7L

 WMMB020N10HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMMB020N10HG4 Datasheet (PDF)

 ..1. Size:1093K  way-on
 wmmb020n10hg4.pdf

WMMB020N10HG4 WMMB020N10HG4

WMMB020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMMB020N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SSSSSThis device is well suited for high efficiency fast switching applications. GTO-263-7LFeatures

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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