WMMB020N10HG4 Specs and Replacement

Type Designator: WMMB020N10HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 277.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 238 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 2190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO263-7L

WMMB020N10HG4 substitution

- MOSFET ⓘ Cross-Reference Search

 

WMMB020N10HG4 datasheet

 ..1. Size:1093K  way-on
 wmmb020n10hg4.pdf pdf_icon

WMMB020N10HG4

... See More ⇒

Detailed specifications: WMM90N08TS, WMM90R1K5S, WMN90R1K5S, WMK90R1K5S, WML90R1K5S, WMP90R1K5S, WMO90R1K5S, WMM95P06TS, AON6380, WMN22N50C4, WMM22N50C4, WMJ22N50C4, WMO22N50C4, WMK22N50C4, WML22N50C4, WMO030N06HG4, WMO030N06LG4

Keywords - WMMB020N10HG4 MOSFET specs

 WMMB020N10HG4 cross reference

 WMMB020N10HG4 equivalent finder

 WMMB020N10HG4 pdf lookup

 WMMB020N10HG4 substitution

 WMMB020N10HG4 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs