All MOSFET. WMO048NV6LG4 Datasheet

 

WMO048NV6LG4 Datasheet and Replacement


   Type Designator: WMO048NV6LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 658 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

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WMO048NV6LG4 Datasheet (PDF)

 ..1. Size:658K  way-on
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WMO048NV6LG4

WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90

 5.1. Size:659K  way-on
 wmo048nv6hg4.pdf pdf_icon

WMO048NV6LG4

WMO048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90

Datasheet: WMM22N50C4 , WMJ22N50C4 , WMO22N50C4 , WMK22N50C4 , WML22N50C4 , WMO030N06HG4 , WMO030N06LG4 , WMO048NV6HG4 , 2SK3568 , WMO053NV8HGS , WMO060N10HGS , WMO080N10HG2 , WMO090NV6HG4 , WMO099N10HGS , WMO099N10LGS , WMO09N15TS , WMO09N20DM .

History: HD2312 | FC8J3304 | AP2306CGTN-HF | STP23N80K5 | AP6679GH-HF | FC6B22220L | RU30C20M3

Keywords - WMO048NV6LG4 MOSFET datasheet

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