WMO048NV6LG4 Specs and Replacement

Type Designator: WMO048NV6LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 658 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

WMO048NV6LG4 substitution

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WMO048NV6LG4 datasheet

 ..1. Size:658K  way-on
 wmo048nv6lg4.pdf pdf_icon

WMO048NV6LG4

WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the D on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. G TO-252 Features V = 65V, I = 90... See More ⇒

 5.1. Size:659K  way-on
 wmo048nv6hg4.pdf pdf_icon

WMO048NV6LG4

WMO048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the D on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. G TO-252 Features V = 65V, I = 90... See More ⇒

Detailed specifications: WMM22N50C4, WMJ22N50C4, WMO22N50C4, WMK22N50C4, WML22N50C4, WMO030N06HG4, WMO030N06LG4, WMO048NV6HG4, 4N60, WMO053NV8HGS, WMO060N10HGS, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, WMO09N15TS, WMO09N20DM

Keywords - WMO048NV6LG4 MOSFET specs

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