All MOSFET. WMO048NV6LG4 Datasheet

 

WMO048NV6LG4 Datasheet and Replacement


   Type Designator: WMO048NV6LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 658 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
      - MOSFET Cross-Reference Search

 

WMO048NV6LG4 Datasheet (PDF)

 ..1. Size:658K  way-on
 wmo048nv6lg4.pdf pdf_icon

WMO048NV6LG4

WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90

 5.1. Size:659K  way-on
 wmo048nv6hg4.pdf pdf_icon

WMO048NV6LG4

WMO048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - WMO048NV6LG4 MOSFET datasheet

 WMO048NV6LG4 cross reference
 WMO048NV6LG4 equivalent finder
 WMO048NV6LG4 lookup
 WMO048NV6LG4 substitution
 WMO048NV6LG4 replacement

 

 
Back to Top

 


 
.