WMO048NV6LG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO048NV6LG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 658 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO252
WMO048NV6LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO048NV6LG4 Datasheet (PDF)
wmo048nv6lg4.pdf
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WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90
wmo048nv6hg4.pdf
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WMO048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .