WMO09N15TS Specs and Replacement

Type Designator: WMO09N15TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: TO252

WMO09N15TS substitution

- MOSFET ⓘ Cross-Reference Search

 

WMO09N15TS datasheet

 ..1. Size:629K  way-on
 wmo09n15ts.pdf pdf_icon

WMO09N15TS

WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET Description WMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 150V, I = 8.6A DS D TO-252 R ... See More ⇒

 8.1. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO09N15TS

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R ... See More ⇒

 8.2. Size:636K  way-on
 wmo09n20dmh.pdf pdf_icon

WMO09N15TS

WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET Description WMO09N20DMH is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R ... See More ⇒

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO09N15TS

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68... See More ⇒

SHOW MORE

Detailed specifications: WMO048NV6HG4, WMO048NV6LG4, WMO053NV8HGS, WMO060N10HGS, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, SI2302, WMO09N20DM, WMO09N20DMH, WMO09P10TS, WMO100N07T1, WMO115N15HG4, WMO119N12LG4, WMO120N04TS, WMO12P05T1

Keywords - WMO09N15TS MOSFET specs

 WMO09N15TS cross reference

 WMO09N15TS equivalent finder

 WMO09N15TS pdf lookup

 WMO09N15TS substitution

 WMO09N15TS replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility