WMO09N15TS. Аналоги и основные параметры

Наименование производителя: WMO09N15TS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2.2 ns

Cossⓘ - Выходная емкость: 23 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO09N15TS

- подборⓘ MOSFET транзистора по параметрам

 

WMO09N15TS даташит

 ..1. Size:629K  way-on
 wmo09n15ts.pdf pdf_icon

WMO09N15TS

WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET Description WMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 150V, I = 8.6A DS D TO-252 R

 8.1. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO09N15TS

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

 8.2. Size:636K  way-on
 wmo09n20dmh.pdf pdf_icon

WMO09N15TS

WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET Description WMO09N20DMH is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO09N15TS

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... WMO048NV6HG4, WMO048NV6LG4, WMO053NV8HGS, WMO060N10HGS, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, SI2302, WMO09N20DM, WMO09N20DMH, WMO09P10TS, WMO100N07T1, WMO115N15HG4, WMO119N12LG4, WMO120N04TS, WMO12P05T1