WMO13N10TS Datasheet and Replacement
Type Designator: WMO13N10TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 4 nC
tr ⓘ - Rise Time: 1.6 nS
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO252
WMO13N10TS substitution
WMO13N10TS Datasheet (PDF)
wmo13n10ts.pdf

WMO13N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO13N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 100V, I = 13A DS DTO-252R
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WMM13N50C4, WML13N5 WM C4 50C4, MO13N50CWMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMO
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