WMO13N10TS MOSFET Datasheet: N-Ch, 100V, 13A. Full specification with pinout and replacement list

WMO13N10TS Specs and Replacement

   Type Designator: WMO13N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 1.6 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO252

WMO13N10TS substitution

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WMO13N10TS datasheet

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WMO13N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMO13N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 100V, I = 13A DS D TO-252 R ... See More ⇒

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WMM13N50C4, WML13N5 WM C4 50C4, MO13N50C WMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M T V Super Ju MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMO... See More ⇒