WMO13P10TS MOSFET Datasheet: P-Ch, 100V, 13.4A. Full specification with pinout and replacement list

WMO13P10TS Specs and Replacement

   Type Designator: WMO13P10TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO252

WMO13P10TS substitution

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WMO13P10TS datasheet

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WMO13P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMO13P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = -100V, I = -13.4A DS D R ... See More ⇒

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WMO13P06T1 60V P-Channel Enhancement Mode Power MOSFET Description WMO13P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -60V, I = -13A DS D TO-252 R ... See More ⇒

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WML13 WMK13N7 3N70EM, W 70EM, WMM13N70EM WMN13 WMP13N7 3N70EM, W 70EM, WMO13N70EM 700V n Power MOSFET V 0.35 Super Junction Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ch... See More ⇒

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WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80M WMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge performa... See More ⇒