WMO13P10TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO13P10TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 13.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO252
WMO13P10TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO13P10TS Datasheet (PDF)
wmo13p10ts.pdf
WMO13P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -13.4A DS DR
wmo13p06t1.pdf
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wmo13n10ts.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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