WMO13P10TS. Аналоги и основные параметры
Наименование производителя: WMO13P10TS
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 59 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO13P10TS
- подборⓘ MOSFET транзистора по параметрам
WMO13P10TS даташит
wmo13p10ts.pdf
WMO13P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMO13P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = -100V, I = -13.4A DS D R
wmo13p06t1.pdf
WMO13P06T1 60V P-Channel Enhancement Mode Power MOSFET Description WMO13P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -60V, I = -13A DS D TO-252 R
wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf
WML13 WMK13N7 3N70EM, W 70EM, WMM13N70EM WMN13 WMP13N7 3N70EM, W 70EM, WMO13N70EM 700V n Power MOSFET V 0.35 Super Junction Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ch
wml13n80m3 wmn13n80m3 wmm13n80m3 wmo13n80m3 wmp13n80m3 wmk13n80m3.pdf
WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80M WMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge performa
Другие IGBT... WMO100N07T1, WMO115N15HG4, WMO119N12LG4, WMO120N04TS, WMO12P05T1, WMO12P06TS, WMO13N10TS, WMO13P06T1, AO3400A, WMO140NV6LG4, WMO15N10T1, WMO15N12TS, WMO15N15T1, WMO15N25T2, WMO175N10HG4, WMO175N10LG4, WMO18N20T2
History: 4N80G-TM3-T | TMU6N65G | WMO25N06TS | RJK4034DJE
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