WMO28N15T2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO28N15T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 73.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: TO252
WMO28N15T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO28N15T2 Datasheet (PDF)
..1. Size:450K way-on
wmo28n15t2.pdf
wmo28n15t2.pdf
WMO28N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO28N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 28A DS DTO-252R
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
