WMO28N15T2 Datasheet and Replacement
Type Designator: WMO28N15T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: TO252
WMO28N15T2 substitution
WMO28N15T2 Datasheet (PDF)
wmo28n15t2.pdf

WMO28N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO28N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 28A DS DTO-252R
Datasheet: WMO20P04T1 , WMO20P15TS , WMO240N10LG2 , WMO25N06TS , WMO25N10T1 , WMO25P03TS , WMO25P04TS , WMO25P06T1 , BS170 , WMO2N100D1 , WMAA2N100D1 , WMO30P03TS , WMO30P10TS , WMO35N06T1 , WMO35P04T1 , WMO35P06TS , WMO40N04TS .
History: NCE30P10S | DHB16N06 | IPB065N10N3 | MTN8N70FP | AP2302AGN-HF | IPA60R460CE | AM70N10-44P
Keywords - WMO28N15T2 MOSFET datasheet
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History: NCE30P10S | DHB16N06 | IPB065N10N3 | MTN8N70FP | AP2302AGN-HF | IPA60R460CE | AM70N10-44P



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