WMO50P03T1 Specs and Replacement

Type Designator: WMO50P03T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

WMO50P03T1 substitution

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WMO50P03T1 datasheet

 ..1. Size:611K  way-on
 wmo50p03t1.pdf pdf_icon

WMO50P03T1

WMO50P03T1 30V P-Channel Enhancement Mode Power MOSFET Description WMO50P03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = -30V, I = -50A DS D R ... See More ⇒

 7.1. Size:612K  way-on
 wmo50p04t1.pdf pdf_icon

WMO50P03T1

WMO50P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMO50P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -40V, I = -50A DS D TO-252 R ... See More ⇒

Detailed specifications: WMO2N100D1, WMAA2N100D1, WMO30P03TS, WMO30P10TS, WMO35N06T1, WMO35P04T1, WMO35P06TS, WMO40N04TS, IRFP460, WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS, WMO60P03TS, WMO690N15HG2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.