WMO50P03T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO50P03T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 43.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
WMO50P03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO50P03T1 Datasheet (PDF)
wmo50p03t1.pdf
WMO50P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO50P03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -30V, I = -50A DS DR
wmo50p04t1.pdf
WMO50P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO50P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -40V, I = -50A DS DTO-252R
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
