WMO90N02T1 Specs and Replacement
Type Designator: WMO90N02T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24.5 nS
Cossⓘ - Output Capacitance: 490 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
WMO90N02T1 substitution
- MOSFET ⓘ Cross-Reference Search
WMO90N02T1 datasheet
wmo90p04ts.pdf
WMO90P04TS 40V P-Channel Enhancement Mode Power MOSFET Description WMO90P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = -40V, I = -95A DS D R ... See More ⇒
wmm90r1k5s wmn90r1k5s wmk90r1k5s wml90r1k5s wmp90r1k5s wmo90r1k5s.pdf
WMM9 1K5S, WM 5S 90R1K5S, WMN90R1 MK90R1K5 WML9 1K5S, WM 5S 90R1K5S, WMP90R1 MO90R1K5 900V 1.28 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low gate charge performan WMO... See More ⇒
wmo90p03ts.pdf
WMO90P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMO90P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = - 30V, I = - 90A DS D TO-252 R ... See More ⇒
Detailed specifications: WMO690N15HG2, WMO6N80D1, WML6N80D1, WMO75N04T1, WMO80N03T1, WMO80N06TS, WMO80N08TS, WMO80P04TS, 8205A, WMO90P03TS, WMO90P04TS, WMO95P06TS, WMO96N03T1, WMO9N65D1, WMP119N10LG2, WMQ020N03LG4, WMQ023N03LG2
Keywords - WMO90N02T1 MOSFET specs
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