WMO90N02T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO90N02T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 24.5 nS
Cossⓘ - Output Capacitance: 490 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
WMO90N02T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO90N02T1 Datasheet (PDF)
wmo90n02t1.pdf
WMO90N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO90N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 20V, I = 90A DS DTO-252R
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