WMO90N02T1 - аналоги и даташиты транзистора

 

WMO90N02T1 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMO90N02T1
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 24.5 ns
   Cossⓘ - Выходная емкость: 490 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для WMO90N02T1

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMO90N02T1 Datasheet (PDF)

 ..1. Size:459K  way-on
 wmo90n02t1.pdf pdf_icon

WMO90N02T1

WMO90N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO90N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 20V, I = 90A DS DTO-252R

 9.1. Size:986K  way-on
 wmo90p04ts.pdf pdf_icon

WMO90N02T1

WMO90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -40V, I = -95A DS DR

 9.2. Size:668K  way-on
 wmm90r1k5s wmn90r1k5s wmk90r1k5s wml90r1k5s wmp90r1k5s wmo90r1k5s.pdf pdf_icon

WMO90N02T1

WMM9 1K5S, WM 5S 90R1K5S, WMN90R1 MK90R1K5WML9 1K5S, WM 5S 90R1K5S, WMP90R1 MO90R1K5 900V 1.28 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

 9.3. Size:610K  way-on
 wmo90p03ts.pdf pdf_icon

WMO90N02T1

WMO90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = - 30V, I = - 90A DS DTO-252R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMO690N15HG2 , WMO6N80D1 , WML6N80D1 , WMO75N04T1 , WMO80N03T1 , WMO80N06TS , WMO80N08TS , WMO80P04TS , 8205A , WMO90P03TS , WMO90P04TS , WMO95P06TS , WMO96N03T1 , WMO9N65D1 , WMP119N10LG2 , WMQ020N03LG4 , WMQ023N03LG2 .

History: WNM07N65 | SM1F08NSU | NTJS4405N

 

 
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