WMO96N03T1 Datasheet and Replacement
Type Designator: WMO96N03T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
WMO96N03T1 substitution
WMO96N03T1 Datasheet (PDF)
wmo96n03t1.pdf

WMO96N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO96N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 30V, I = 96A DS DTO-252R
Datasheet: WMO80N03T1 , WMO80N06TS , WMO80N08TS , WMO80P04TS , WMO90N02T1 , WMO90P03TS , WMO90P04TS , WMO95P06TS , AO3400 , WMO9N65D1 , WMP119N10LG2 , WMQ020N03LG4 , WMQ023N03LG2 , WMQ032N04LG2 , WMQ040N03LG2 , WMQ048NV6HG4 , WMQ048NV6LG4 .
History: WMJ53N60C4 | SDF240 | RZL035P01TR | 3SK162 | SM2312NSA | WMO15N65C2 | SE8090A
Keywords - WMO96N03T1 MOSFET datasheet
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History: WMJ53N60C4 | SDF240 | RZL035P01TR | 3SK162 | SM2312NSA | WMO15N65C2 | SE8090A



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