WMO96N03T1 PDF and Equivalents Search

 

WMO96N03T1 Specs and Replacement

Type Designator: WMO96N03T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO252

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WMO96N03T1 datasheet

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 wmo96n03t1.pdf pdf_icon

WMO96N03T1

WMO96N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMO96N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 30V, I = 96A DS D TO-252 R ... See More ⇒

Detailed specifications: WMO80N03T1, WMO80N06TS, WMO80N08TS, WMO80P04TS, WMO90N02T1, WMO90P03TS, WMO90P04TS, WMO95P06TS, IRF9540, WMO9N65D1, WMP119N10LG2, WMQ020N03LG4, WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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