All MOSFET. WMO96N03T1 Datasheet

 

WMO96N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO96N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 62.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 96 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 32 nC
   Rise Time (tr): 28 nS
   Drain-Source Capacitance (Cd): 420 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
   Package: TO252

 WMO96N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO96N03T1 Datasheet (PDF)

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 wmo96n03t1.pdf

WMO96N03T1 WMO96N03T1

WMO96N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO96N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 30V, I = 96A DS DTO-252R

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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