All MOSFET. WMO96N03T1 Datasheet

 

WMO96N03T1 Datasheet and Replacement


   Type Designator: WMO96N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

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WMO96N03T1 Datasheet (PDF)

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WMO96N03T1

WMO96N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO96N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 30V, I = 96A DS DTO-252R

Datasheet: WMO80N03T1 , WMO80N06TS , WMO80N08TS , WMO80P04TS , WMO90N02T1 , WMO90P03TS , WMO90P04TS , WMO95P06TS , K3569 , WMO9N65D1 , WMP119N10LG2 , WMQ020N03LG4 , WMQ023N03LG2 , WMQ032N04LG2 , WMQ040N03LG2 , WMQ048NV6HG4 , WMQ048NV6LG4 .

History: SSFD4004 | IPL60R185P7 | IRL540NLPBF | STB46NF30 | SFG12R12DF | WMR140NV6LG4

Keywords - WMO96N03T1 MOSFET datasheet

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