WMQ048NV6HG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ048NV6HG4
Marking Code: 048V6H4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 68 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28.5 nC
trⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 670 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PDFN3030-8L
WMQ048NV6HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ048NV6HG4 Datasheet (PDF)
wmq048nv6hg4.pdf
WMQ048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ048NV6HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize GSSSSGthe on-state resistance and yet maintain superior switching Sperformance. This device is well suited for high efficiency fast PDFN3030-8Lswitching a
wmq048nv6lg4.pdf
WMQ048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDescription DDDDDD DWMQ048NV6LG4 uses Wayon's 4th generation power trench SGSMOSFET technology that has been especially tailored to minimize SSSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching ap
wmq040n03lg2.pdf
WMQ040N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description DDDDDDD DWMQ040N03LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching appl
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