WMQ048NV6HG4 Specs and Replacement
Type Designator: WMQ048NV6HG4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 670 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PDFN3030-8L
WMQ048NV6HG4 substitution
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WMQ048NV6HG4 datasheet
wmq048nv6hg4.pdf
WMQ048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ048NV6HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize G S S S S G the on-state resistance and yet maintain superior switching S performance. This device is well suited for high efficiency fast PDFN3030-8L switching a... See More ⇒
wmq048nv6lg4.pdf
WMQ048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D Description D D D D D D D WMQ048NV6LG4 uses Wayon's 4th generation power trench S G S MOSFET technology that has been especially tailored to minimize S S S G S the on-state resistance and yet maintain superior switching PDFN3030-8L performance. This device is well suited for high efficiency fast switching ap... See More ⇒
wmq040n03lg2.pdf
WMQ040N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ040N03LG2 uses Wayon's 2nd generation power trench MOSFET S G S technology that has been especially tailored to minimize the on-state S S S G S resistance and yet maintain superior switching performance. This PDFN3030-8L device is well suited for high efficiency fast switching appl... See More ⇒
Detailed specifications: WMO95P06TS, WMO96N03T1, WMO9N65D1, WMP119N10LG2, WMQ020N03LG4, WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, IRLB4132, WMQ048NV6LG4, WMQ050N03LG4, WMQ050N04LG2, WMQ060N08LG2, WMQ080N03LG2, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2
Keywords - WMQ048NV6HG4 MOSFET specs
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History: WMQ048NV6LG4
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