WMQ080N03LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ080N03LG2
Marking Code: 080N03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 21.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 335 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PDFN3030-8L
WMQ080N03LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ080N03LG2 Datasheet (PDF)
wmq080n03lg2.pdf
WMQ080N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description DDDDDDD DWMQ080N03LG2 uses Wayon's 2nd generation power trench SGSMOSFET technology that has been especially tailored to minimize the SSSGSon-state resistance and yet maintain superior switching performance. PDFN3030-8LThis device is well suited for high efficiency fast switching appl
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