WMQ080N03LG2 PDF and Equivalents Search

 

WMQ080N03LG2 Specs and Replacement

Type Designator: WMQ080N03LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.5 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PDFN3030-8L

WMQ080N03LG2 substitution

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WMQ080N03LG2 datasheet

 ..1. Size:618K  way-on
 wmq080n03lg2.pdf pdf_icon

WMQ080N03LG2

WMQ080N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ080N03LG2 uses Wayon's 2nd generation power trench S G S MOSFET technology that has been especially tailored to minimize the S S S G S on-state resistance and yet maintain superior switching performance. PDFN3030-8L This device is well suited for high efficiency fast switching appl... See More ⇒

Detailed specifications: WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4, WMQ050N03LG4, WMQ050N04LG2, WMQ060N08LG2, SPP20N60C3, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, WMQ12P10TS, WMQ140DNV6LG4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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