All MOSFET. WMQ080N03LG2 Datasheet

 

WMQ080N03LG2 Datasheet and Replacement


   Type Designator: WMQ080N03LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.5 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN3030-8L
 

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WMQ080N03LG2 Datasheet (PDF)

 ..1. Size:618K  way-on
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WMQ080N03LG2

WMQ080N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description DDDDDDD DWMQ080N03LG2 uses Wayon's 2nd generation power trench SGSMOSFET technology that has been especially tailored to minimize the SSSGSon-state resistance and yet maintain superior switching performance. PDFN3030-8LThis device is well suited for high efficiency fast switching appl

Datasheet: WMQ023N03LG2 , WMQ032N04LG2 , WMQ040N03LG2 , WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 , WMQ050N04LG2 , WMQ060N08LG2 , AON7410 , WMQ090N04LG2 , WMQ090NV6LG4 , WMQ098N03LG2 , WMQ099N10LG2 , WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 .

History: 75N05E | STH6N95K5-2 | SFF9140Z | IPI120P04P4L-03

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