WMQ140NV6LG4 MOSFET Datasheet: N-Ch, 65V, 33A. Full specification with pinout and replacement list

WMQ140NV6LG4 Specs and Replacement

Type Designator: WMQ140NV6LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.1 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PDFN3030-8L

WMQ140NV6LG4 substitution

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WMQ140NV6LG4 datasheet

..1. Size:982K way-on
wmq140nv6lg4.pdf pdf_icon

WMQ140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ140NV6LG4 uses Wayon's 4th generation power trench G MOSFET technology that has been especially tailored to minimize the ss s ss G s on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN3... See More ⇒

8.1. Size:1038K way-on
wmq140dnv6lg4.pdf pdf_icon

WMQ140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 D1 D2 WMQ140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 G2 G1 S2 G1 S2 G2 S1 This device is well suited for high efficiency fast swi... See More ⇒

Detailed specifications: WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, WMQ12P10TS, WMQ140DNV6LG4, AON6380, WMQ15DN04TS, WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS, WMQ20N06TS, WMQ25P03T1, WMQ25P04T1