WMQ20N06TS Specs and Replacement
Type Designator: WMQ20N06TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.3 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: PDFN3030-8L
WMQ20N06TS substitution
WMQ20N06TS datasheet
wmq20n06ts.pdf
WMQ20N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMQ20N06TS uses advanced power trench technology that D D D D D D has been especially tailored to minimize the on-state resistance D D and yet maintain superior switching performance. S G S S S Features S G S V = 60V, I = 20A DS D PDFN3030-8L R ... See More ⇒
wmq20dn06ts.pdf
WMQ20DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D2 D1 Description D2 D1 D1 D2 D1 D2 WMQ20DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance S1 G2 G1 S2 S2 G1 and yet maintain superior switching performance. G2 S1 Features PDFN3030-8L V = 60V, I = 20A DS D R ... See More ⇒
Detailed specifications: WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , IRFP450 , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 .
Keywords - WMQ20N06TS MOSFET specs
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WMQ20N06TS replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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