All MOSFET. WMQ40DN03T1 Datasheet

 

WMQ40DN03T1 Datasheet and Replacement


   Type Designator: WMQ40DN03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN3030-8L
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WMQ40DN03T1 Datasheet (PDF)

 ..1. Size:467K  way-on
 wmq40dn03t1.pdf pdf_icon

WMQ40DN03T1

WMQ40DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ40DN03T1 uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = 30V, I = 40A DS DPDFN3030-8LR

 9.1. Size:979K  way-on
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WMQ40DN03T1

WMQ40N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ40N03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet SGSmaintain superior switching performance. SSSGSFeatures PDFN3030-8L V = 30V, I = 40A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTC2804Q8 | WMK25N80M3

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