All MOSFET. WMQ40DN03T1 Datasheet

 

WMQ40DN03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ40DN03T1
   Marking Code: Q40DN03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN3030-8L

 WMQ40DN03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ40DN03T1 Datasheet (PDF)

 ..1. Size:467K  way-on
 wmq40dn03t1.pdf

WMQ40DN03T1 WMQ40DN03T1

WMQ40DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ40DN03T1 uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = 30V, I = 40A DS DPDFN3030-8LR

 9.1. Size:979K  way-on
 wmq40n03t1.pdf

WMQ40DN03T1 WMQ40DN03T1

WMQ40N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ40N03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet SGSmaintain superior switching performance. SSSGSFeatures PDFN3030-8L V = 30V, I = 40A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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