All MOSFET. WMQ40DN03T1 Datasheet

 

WMQ40DN03T1 Datasheet and Replacement


   Type Designator: WMQ40DN03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN3030-8L
 

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WMQ40DN03T1 Datasheet (PDF)

 ..1. Size:467K  way-on
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WMQ40DN03T1

WMQ40DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ40DN03T1 uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = 30V, I = 40A DS DPDFN3030-8LR

 9.1. Size:979K  way-on
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WMQ40DN03T1

WMQ40N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ40N03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet SGSmaintain superior switching performance. SSSGSFeatures PDFN3030-8L V = 30V, I = 40A DS DR

Datasheet: WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , IRFB31N20D , WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS .

History: RU4089R | IRF7324PBF-1

Keywords - WMQ40DN03T1 MOSFET datasheet

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