WMQ40DN03T1 MOSFET Datasheet: N-Ch, 30V, 40A. Full specification with pinout and replacement list

WMQ40DN03T1 Specs and Replacement

Type Designator: WMQ40DN03T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PDFN3030-8L

WMQ40DN03T1 substitution

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WMQ40DN03T1 datasheet

..1. Size:467K way-on
wmq40dn03t1.pdf pdf_icon

WMQ40DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 WMQ40DN03T1 uses advanced power trench technology that D1 D2 has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 G2 G1 S2 S2 G1 Features G2 S1 V = 30V, I = 40A DS D PDFN3030-8L R ... See More ⇒

9.1. Size:979K way-on
wmq40n03t1.pdf pdf_icon

WMQ40N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMQ40N03T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet S G S maintain superior switching performance. S S S G S Features PDFN3030-8L V = 30V, I = 40A DS D R ... See More ⇒

Detailed specifications: WMQ30N02T1, WMQ30N03T2, WMQ30N04TS, WMQ30N06TS, WMQ30P03T1, WMQ30P04T1, WMQ35P02TS, WMQ37N03T1, IRF2807, WMQ40N03T1, WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1, WMQ55P02T1, WMQ60P02TS