WMQ42P03T1 Datasheet and Replacement
Type Designator: WMQ42P03T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 325 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: PDFN3030-8L
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WMQ42P03T1 Datasheet (PDF)
wmq42p03t1.pdf

WMQ42P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ42P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -42A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | H7N1002LM | DM12N65C | ZVN0124ASTOA | FCPF7N60YDTU | SPD04N60S5
Keywords - WMQ42P03T1 MOSFET datasheet
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History: AP6679GI-HF | H7N1002LM | DM12N65C | ZVN0124ASTOA | FCPF7N60YDTU | SPD04N60S5



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