All MOSFET. WMQ46N03T1 Datasheet

 

WMQ46N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ46N03T1
   Marking Code: Q46N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.8 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN3030-8L

 WMQ46N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ46N03T1 Datasheet (PDF)

 ..1. Size:645K  way-on
 wmq46n03t1.pdf

WMQ46N03T1 WMQ46N03T1

WMQ46N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ46N03T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 46A DS DR

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