WMQ46N03T1 PDF and Equivalents Search

 

WMQ46N03T1 Specs and Replacement

Type Designator: WMQ46N03T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PDFN3030-8L

WMQ46N03T1 substitution

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WMQ46N03T1 datasheet

 ..1. Size:645K  way-on
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WMQ46N03T1

WMQ46N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ46N03T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 46A DS D R ... See More ⇒

Detailed specifications: WMQ30N06TS, WMQ30P03T1, WMQ30P04T1, WMQ35P02TS, WMQ37N03T1, WMQ40DN03T1, WMQ40N03T1, WMQ42P03T1, 2N60, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1, WMQ55P02T1, WMQ60P02TS, WMQ80N03T1, WMR050N03LG4, WMR05N10TS

Keywords - WMQ46N03T1 MOSFET specs

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