All MOSFET. WMQ50N04T1 Datasheet

 

WMQ50N04T1 Datasheet and Replacement


   Type Designator: WMQ50N04T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: PDFN3030-8L
 

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WMQ50N04T1 Datasheet (PDF)

 ..1. Size:599K  way-on
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WMQ50N04T1

WMQ50N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ50N04T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 40V, I = 50A DS D R

 9.1. Size:612K  way-on
 wmq50p03t1.pdf pdf_icon

WMQ50N04T1

WMQ50P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ50P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -50A DS DR

Datasheet: WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 , WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , K2611 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , WMR05P04TS .

History: SI1029X | RFD8P06ESM | UPA1916 | HY5208W | STD55N4F5 | STP10NM60ND | IRF3707ZPBF

Keywords - WMQ50N04T1 MOSFET datasheet

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