WMQ50N04T1 Datasheet and Replacement
Type Designator: WMQ50N04T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 22.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: PDFN3030-8L
WMQ50N04T1 substitution
WMQ50N04T1 Datasheet (PDF)
wmq50n04t1.pdf

WMQ50N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ50N04T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 40V, I = 50A DS D R
wmq50p03t1.pdf

WMQ50P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ50P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -50A DS DR
Datasheet: WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 , WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , K2611 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , WMR05P04TS .
History: AP2R803GMT-HF | RD3P175SN
Keywords - WMQ50N04T1 MOSFET datasheet
WMQ50N04T1 cross reference
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History: AP2R803GMT-HF | RD3P175SN



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