WMQ50N04T1 Datasheet and Replacement
Type Designator: WMQ50N04T1
Marking Code: Q50N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 22.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 185 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: PDFN3030-8L
WMQ50N04T1 Datasheet (PDF)
wmq50n04t1.pdf

WMQ50N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ50N04T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 40V, I = 50A DS D R
wmq50p03t1.pdf

WMQ50P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ50P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -50A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KXU03N25 | SVF12N65CFQ | SDF9N100SXH | GSM4412W | SPA65R38G | 2SK789 | LNTA4001NT1G
Keywords - WMQ50N04T1 MOSFET datasheet
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History: KXU03N25 | SVF12N65CFQ | SDF9N100SXH | GSM4412W | SPA65R38G | 2SK789 | LNTA4001NT1G



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