All MOSFET. WMQ55N04T1 Datasheet

 

WMQ55N04T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ55N04T1
   Marking Code: Q55N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 298 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN3030-8L

 WMQ55N04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ55N04T1 Datasheet (PDF)

 ..1. Size:597K  way-on
 wmq55n04t1.pdf

WMQ55N04T1 WMQ55N04T1

WMQ55N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ55N04T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 40V, I = 55A DS DR

 9.1. Size:624K  way-on
 wmq55p02t1.pdf

WMQ55N04T1 WMQ55N04T1

WMQ55P02T1 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ55P02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -20V, I = -55A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AOWF450A70

 

 
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