WMQ55N04T1 Specs and Replacement
Type Designator: WMQ55N04T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 298 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PDFN3030-8L
WMQ55N04T1 substitution
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WMQ55N04T1 datasheet
wmq55n04t1.pdf
WMQ55N04T1 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ55N04T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 40V, I = 55A DS D R ... See More ⇒
wmq55p02t1.pdf
WMQ55P02T1 20V P-Channel Enhancement Mode Power MOSFET Description D D D WMQ55P02T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -20V, I = -55A DS D R ... See More ⇒
Detailed specifications: WMQ35P02TS, WMQ37N03T1, WMQ40DN03T1, WMQ40N03T1, WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, 75N75, WMQ55P02T1, WMQ60P02TS, WMQ80N03T1, WMR050N03LG4, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS
Keywords - WMQ55N04T1 MOSFET specs
WMQ55N04T1 cross reference
WMQ55N04T1 equivalent finder
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WMQ55N04T1 substitution
WMQ55N04T1 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: TSP5N60M | APT5024SFLLG
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