STF2454A MOSFET Datasheet: N-Ch, 24V, 8.6A. Full specification with pinout and replacement list

STF2454A Specs and Replacement

   Type Designator: STF2454A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 435 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TDFN2X5

STF2454A substitution

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STF2454A datasheet

..1. Size:98K samhop
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Green Product STF2454A a S mHop Microelectronics C orp. Ver 3.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 14.3 @ VGS=4.0V 24V 8.6A 14.5 @ VGS=3.7V ESD Protected. 16.5 @ VGS=3.1V 20.0 @ VGS=2.5V Bottom Drain Co... See More ⇒

7.1. Size:106K samhop
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Green Product STF2454 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 14.3 @ VGS=4.0V 24V 8.0A 14.5 @ VGS=3.7V ESD Protected. 16.5 @ VGS=3.1V 20.0 @ VGS=2.5V G2 Bottom Drain... See More ⇒

8.1. Size:100K samhop
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Green Product STF2458 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 9.5 @ VGS=4.5V Suface Mount Package. 10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V ESD Protected. 11.5 @ VGS=3.1V 14.0 @ VGS=2.5V G2 Bottom Drain ... See More ⇒

8.2. Size:96K samhop
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Green Product STF2459A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 6.2 @ VGS=10V Suface Mount Package. 7.5 @ VGS=4.5V ESD Protected. 8.0 @ VGS=4.0V 24V 12A 8.6 @ VGS=3.7V 10.3 @ VGS=3.1V 16.3 @ VGS=2.5V ... See More ⇒