WMR07N06TS Datasheet and Replacement
Type Designator: WMR07N06TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15.3 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: DFN2020-6L
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WMR07N06TS Datasheet (PDF)
wmr07n06ts.pdf

WMR07N06TS 60V N-Channel Enhancement Mode Power MOSFET GDescriptionDDSDSDWMR07N06TS uses advanced power trench technology that has SDDDbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = 60V, I = 7A DS D R
wmr07n03t1.pdf

WMR07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 7A DS D DFN2020-6LR
wmr07p03ts.pdf

WMR07P03TS 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR07P03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -7A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CSD17301Q5 | AONS65625 | WMR13N03T1 | 2N65KG-TF3-T | 2SJ146 | 13N50G-TQ2-T | AP2R803AGMT-HF
Keywords - WMR07N06TS MOSFET datasheet
WMR07N06TS cross reference
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History: CSD17301Q5 | AONS65625 | WMR13N03T1 | 2N65KG-TF3-T | 2SJ146 | 13N50G-TQ2-T | AP2R803AGMT-HF



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