All MOSFET. WMR07N06TS Datasheet

 

WMR07N06TS Datasheet and Replacement


   Type Designator: WMR07N06TS
   Marking Code: R07N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 15.3 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: DFN2020-6L
 

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WMR07N06TS Datasheet (PDF)

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 wmr07n06ts.pdf pdf_icon

WMR07N06TS

WMR07N06TS 60V N-Channel Enhancement Mode Power MOSFET GDescriptionDDSDSDWMR07N06TS uses advanced power trench technology that has SDDDbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = 60V, I = 7A DS D R

 7.1. Size:488K  way-on
 wmr07n03t1.pdf pdf_icon

WMR07N06TS

WMR07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 7A DS D DFN2020-6LR

 9.1. Size:616K  way-on
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WMR07N06TS

WMR07P03TS 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR07P03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -7A DS DR

Datasheet: WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , WMR05P04TS , WMR07N03T1 , IRF1405 , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB .

History: SMM2348ES | WMS175N10LG4

Keywords - WMR07N06TS MOSFET datasheet

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