WMR07P03TS Specs and Replacement
Type Designator: WMR07P03TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 137 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: DFN2020-6L
WMR07P03TS substitution
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WMR07P03TS datasheet
wmr07p03ts.pdf
WMR07P03TS 30V P-Channel Enhancement Mode Power MOSFET G D Pin1 D Description S D S D S D D WMR07P03TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V = -30V, I = -7A DS D R ... See More ⇒
wmr07n06ts.pdf
WMR07N06TS 60V N-Channel Enhancement Mode Power MOSFET G Description D D S D S D WMR07N06TS uses advanced power trench technology that has S D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V = 60V, I = 7A DS D R ... See More ⇒
Detailed specifications: WMQ55P02T1, WMQ60P02TS, WMQ80N03T1, WMR050N03LG4, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, IRLB3034, WMR09N02T1, WMR10N03T1, WMR12N03T1, WMR12P02T1, WMR13N03T1, WMR140NV6LG4, WMR14N03TB, WMR15N02T1
Keywords - WMR07P03TS MOSFET specs
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History: MTE65N20H8
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