All MOSFET. WMR09N02T1 Datasheet

 

WMR09N02T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMR09N02T1
   Marking Code: R09N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: DFN2020-6L

 WMR09N02T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMR09N02T1 Datasheet (PDF)

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 wmr09n02t1.pdf

WMR09N02T1 WMR09N02T1

WMR09N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMR09N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFN2020-6LFeatures V =20V, I = 9A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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