All MOSFET. WMR09N02T1 Datasheet

 

WMR09N02T1 Datasheet and Replacement


   Type Designator: WMR09N02T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: DFN2020-6L
 

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WMR09N02T1 Datasheet (PDF)

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WMR09N02T1

WMR09N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMR09N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFN2020-6LFeatures V =20V, I = 9A DS DR

Datasheet: WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , AON7403 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS .

History: LSE65R099GF | HM4922 | STB33N65M2 | BRCS030N04DP | BRCS030N10SHRA | PJP3NA80 | MTP1N80E

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