All MOSFET. WMR13N03T1 Datasheet

 

WMR13N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMR13N03T1
   Marking Code: R13N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN2020-6L

 WMR13N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMR13N03T1 Datasheet (PDF)

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 wmr13n03t1.pdf

WMR13N03T1 WMR13N03T1

WMR13N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR13N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFN2020-6LFeatures V =30V, I = 12.5A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1840

 

 
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