All MOSFET. WMR13N03T1 Datasheet

 

WMR13N03T1 Datasheet and Replacement


   Type Designator: WMR13N03T1
   Marking Code: R13N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN2020-6L
 

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WMR13N03T1 Datasheet (PDF)

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WMR13N03T1

WMR13N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR13N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFN2020-6LFeatures V =30V, I = 12.5A DS DR

Datasheet: WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , 2SK3918 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 .

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