All MOSFET. WMR13N03T1 Datasheet

 

WMR13N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMR13N03T1
   Marking Code: R13N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN2020-6L

 WMR13N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMR13N03T1 Datasheet (PDF)

 ..1. Size:478K  way-on
 wmr13n03t1.pdf

WMR13N03T1 WMR13N03T1

WMR13N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR13N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFN2020-6LFeatures V =30V, I = 12.5A DS DR

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top