WMR14N03TB MOSFET Datasheet: N-Ch, 30V, 13.8A. Full specification with pinout and replacement list

WMR14N03TB Specs and Replacement

Type Designator: WMR14N03TB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DFN2020-6L

WMR14N03TB substitution

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WMR14N03TB datasheet

..1. Size:622K way-on
wmr14n03tb.pdf pdf_icon

WMR14N03TB 30V N-Channel Enhancement Mode Power MOSFET G Description D D S D S D WMR14N03TB uses advanced power trench technology that has S D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V =30V, I = 13.8A DS D R ... See More ⇒

9.1. Size:992K way-on
wmr140nv6lg4.pdf pdf_icon

WMR140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET G D Pin1 D Description S D S D S D D D WMR140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state G D resistance and yet maintain superior switching performance. This D DFN2020-6L device is well suited for high efficiency fast switching appl... See More ⇒

Detailed specifications: WMR07N06TS, WMR07P03TS, WMR09N02T1, WMR10N03T1, WMR12N03T1, WMR12P02T1, WMR13N03T1, WMR140NV6LG4, MMIS60R580P, WMR15N02T1, WMR15N03TS, WMS02P15TS, WMS032N04LG2, WMS048NV6HG4, WMS048NV6LG4, WMS04N10T1, WMS04N10TS