All MOSFET. WMR14N03TB Datasheet

 

WMR14N03TB MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMR14N03TB
   Marking Code: R14N03B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 13.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.5 nC
   trⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 188 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN2020-6L

 WMR14N03TB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMR14N03TB Datasheet (PDF)

 ..1. Size:622K  way-on
 wmr14n03tb.pdf

WMR14N03TB WMR14N03TB

WMR14N03TB 30V N-Channel Enhancement Mode Power MOSFET GDescriptionDDSDSDWMR14N03TB uses advanced power trench technology that has SDDDbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V =30V, I = 13.8A DS DR

 9.1. Size:992K  way-on
 wmr140nv6lg4.pdf

WMR14N03TB WMR14N03TB

WMR140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET GDPin1DDescription SDSDSDDDWMR140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appl

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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