All MOSFET. WMR14N03TB Datasheet

 

WMR14N03TB Datasheet and Replacement


   Type Designator: WMR14N03TB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 188 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN2020-6L
 

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WMR14N03TB Datasheet (PDF)

 ..1. Size:622K  way-on
 wmr14n03tb.pdf pdf_icon

WMR14N03TB

WMR14N03TB 30V N-Channel Enhancement Mode Power MOSFET GDescriptionDDSDSDWMR14N03TB uses advanced power trench technology that has SDDDbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V =30V, I = 13.8A DS DR

 9.1. Size:992K  way-on
 wmr140nv6lg4.pdf pdf_icon

WMR14N03TB

WMR140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET GDPin1DDescription SDSDSDDDWMR140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appl

Datasheet: WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , MMIS60R580P , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS .

History: MDP10N055TH | BSD223P | MDP12N50TH | IRF8721G

Keywords - WMR14N03TB MOSFET datasheet

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