All MOSFET. WMS05P04TS Datasheet

 

WMS05P04TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMS05P04TS
   Marking Code: S05P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.8 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOP-8L

 WMS05P04TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMS05P04TS Datasheet (PDF)

 ..1. Size:790K  way-on
 wms05p04ts.pdf

WMS05P04TS WMS05P04TS

WMS05P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -40V, I = -5A DS DR

 7.1. Size:761K  way-on
 wms05p06t1.pdf

WMS05P04TS WMS05P04TS

WMS05P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P06T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -60V, I = -4.5A DS DSOP-8LR

 8.1. Size:763K  way-on
 wms05p10ts.pdf

WMS05P04TS WMS05P04TS

WMS05P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P10TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -100V, I = -4.5A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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