WMS05P04TS Datasheet and Replacement
Type Designator: WMS05P04TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOP-8L
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WMS05P04TS Datasheet (PDF)
wms05p04ts.pdf

WMS05P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -40V, I = -5A DS DR
wms05p06t1.pdf

WMS05P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P06T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -60V, I = -4.5A DS DSOP-8LR
wms05p10ts.pdf

WMS05P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P10TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -100V, I = -4.5A DS DR
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AONR66820 | KNB2710A | STD50N03L-1 | STD4NK60Z | PTP40N20 | PE534SA | DF23MR12W1M1PB11
Keywords - WMS05P04TS MOSFET datasheet
WMS05P04TS cross reference
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History: AONR66820 | KNB2710A | STD50N03L-1 | STD4NK60Z | PTP40N20 | PE534SA | DF23MR12W1M1PB11



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