WMS05P04TS - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMS05P04TS
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6.5 ns
Cossⓘ - Выходная емкость: 47 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: SOP8
Аналог (замена) для WMS05P04TS
WMS05P04TS Datasheet (PDF)
wms05p04ts.pdf
WMS05P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -40V, I = -5A DS DR
wms05p06t1.pdf
WMS05P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P06T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -60V, I = -4.5A DS DSOP-8LR
wms05p10ts.pdf
WMS05P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS05P10TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -100V, I = -4.5A DS DR
Другие MOSFET... WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , IRF840 , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS .
History: FDS6673BZ | RUH120N140R | EMA09N03AN | RUC002N05 | IRF623FI | SFW9644 | IRF8736TR
History: FDS6673BZ | RUH120N140R | EMA09N03AN | RUC002N05 | IRF623FI | SFW9644 | IRF8736TR
Список транзисторов
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