WMS06P04T1 Datasheet and Replacement
Type Designator: WMS06P04T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 87 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOP-8L
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WMS06P04T1 Datasheet (PDF)
wms06p04t1.pdf

WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS06P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -40V, I = -6A DS DSOP-8LR
wms06n15t2.pdf

WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS06N15T2 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 150V, I = 5.8A DS DR
wms06n10ts.pdf

WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS06N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 5.8A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: APT60M75JLL | 1N70Z | AP30H80Q | R6006JND3 | CS6N60A3D | S8045RP | AOSS32128
Keywords - WMS06P04T1 MOSFET datasheet
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History: APT60M75JLL | 1N70Z | AP30H80Q | R6006JND3 | CS6N60A3D | S8045RP | AOSS32128



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