WMS06P04T1 - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMS06P04T1
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7.1 ns
Cossⓘ - Выходная емкость: 87 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: SOP8
WMS06P04T1 Datasheet (PDF)
wms06p04t1.pdf

WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS06P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -40V, I = -6A DS DSOP-8LR
wms06n15t2.pdf

WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS06N15T2 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 150V, I = 5.8A DS DR
wms06n10ts.pdf

WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS06N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 5.8A DS DR
Другие MOSFET... WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , IRF640 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , WMS08P04TS , WMS090DNV6LG4 , WMS090N04LG2 .
History: GM8205A | AP13N50W | WMN12N105C2
History: GM8205A | AP13N50W | WMN12N105C2



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