WMS08DN06TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS08DN06TS
Marking Code: S08DN06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 15.3 nS
Cossⓘ - Output Capacitance: 57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOP-8L
WMS08DN06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS08DN06TS Datasheet (PDF)
wms08dn06ts.pdf
WMS08DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS08DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 60V, I = 8A DS DR
wms08dp03ts.pdf
WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2WMS08DP03TS uses advanced power trench technology that has D2been especially tailored to minimize the on-state resistance and yet S1maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -8A DS DR
wms08dh04t1.pdf
WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS08DH04T1 uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 7.5A DS DR
wms08p03t1.pdf
WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDWMS08P03T1 uses advanced power trench technology that has DDbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. SFeatures SSG V = -30V, I = -8A DS DSOP-8LR
wms08p04ts.pdf
WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS08P04TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Ssuperior switching performance. SSGFeatures SOP-8L V = -40V, I = -8A DS DR
wms08n06ts.pdf
WMS08N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS08N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 60V, I = 8A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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