Справочник MOSFET. WMS08DN06TS

 

WMS08DN06TS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMS08DN06TS
   Маркировка: S08DN06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 15.3 ns
   Cossⓘ - Выходная емкость: 57 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
   Тип корпуса: SOP-8L

 Аналог (замена) для WMS08DN06TS

 

 

WMS08DN06TS Datasheet (PDF)

 ..1. Size:958K  way-on
 wms08dn06ts.pdf

WMS08DN06TS WMS08DN06TS

WMS08DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS08DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 60V, I = 8A DS DR

 8.1. Size:764K  way-on
 wms08dp03ts.pdf

WMS08DN06TS WMS08DN06TS

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2WMS08DP03TS uses advanced power trench technology that has D2been especially tailored to minimize the on-state resistance and yet S1maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -8A DS DR

 8.2. Size:846K  way-on
 wms08dh04t1.pdf

WMS08DN06TS WMS08DN06TS

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS08DH04T1 uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 7.5A DS DR

 9.1. Size:764K  way-on
 wms08p03t1.pdf

WMS08DN06TS WMS08DN06TS

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDWMS08P03T1 uses advanced power trench technology that has DDbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. SFeatures SSG V = -30V, I = -8A DS DSOP-8LR

 9.2. Size:785K  way-on
 wms08p04ts.pdf

WMS08DN06TS WMS08DN06TS

WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS08P04TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Ssuperior switching performance. SSGFeatures SOP-8L V = -40V, I = -8A DS DR

 9.3. Size:975K  way-on
 wms08n06ts.pdf

WMS08DN06TS WMS08DN06TS

WMS08N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS08N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 60V, I = 8A DS DR

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