Справочник MOSFET. WMS08DN06TS

 

WMS08DN06TS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMS08DN06TS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15.3 ns
   Cossⓘ - Выходная емкость: 57 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
   Тип корпуса: SOP-8L
 

 Аналог (замена) для WMS08DN06TS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMS08DN06TS Datasheet (PDF)

 ..1. Size:958K  way-on
 wms08dn06ts.pdf pdf_icon

WMS08DN06TS

WMS08DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS08DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 60V, I = 8A DS DR

 8.1. Size:764K  way-on
 wms08dp03ts.pdf pdf_icon

WMS08DN06TS

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2WMS08DP03TS uses advanced power trench technology that has D2been especially tailored to minimize the on-state resistance and yet S1maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -8A DS DR

 8.2. Size:846K  way-on
 wms08dh04t1.pdf pdf_icon

WMS08DN06TS

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS08DH04T1 uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 7.5A DS DR

 9.1. Size:764K  way-on
 wms08p03t1.pdf pdf_icon

WMS08DN06TS

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDWMS08P03T1 uses advanced power trench technology that has DDbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. SFeatures SSG V = -30V, I = -8A DS DSOP-8LR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 , IRFP460 , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , WMS08P04TS , WMS090DNV6LG4 , WMS090N04LG2 , WMS090NV6LG4 , WMS099N10LGS .

History: AUIRF7379Q | IRFAC32 | SI7107DN | RU40C40L4 | IRLU3714 | SI7405BDN | MDP10N027TH

 

 
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