WMS08DN06TS - Даташиты. Аналоги. Основные параметры

WMS08DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS08DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 60V, I = 8A DS DR

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2WMS08DP03TS uses advanced power trench technology that has D2been especially tailored to minimize the on-state resistance and yet S1maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -8A DS DR

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS08DH04T1 uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 7.5A DS DR

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDWMS08P03T1 uses advanced power trench technology that has DDbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. SFeatures SSG V = -30V, I = -8A DS DSOP-8LR

WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS08P04TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Ssuperior switching performance. SSGFeatures SOP-8L V = -40V, I = -8A DS DR

WMS08N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS08N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 60V, I = 8A DS DR