WMS08P04TS PDF and Equivalents Search

 

WMS08P04TS Specs and Replacement

Type Designator: WMS08P04TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.5 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: SOP8

WMS08P04TS substitution

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WMS08P04TS datasheet

 ..1. Size:785K  way-on
 wms08p04ts.pdf pdf_icon

WMS08P04TS

WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET D Description D D WMS08P04TS uses advanced power trench technology that has been D especially tailored to minimize the on-state resistance and yet maintain S superior switching performance. S S G Features SOP-8L V = -40V, I = -8A DS D R ... See More ⇒

 7.1. Size:764K  way-on
 wms08p03t1.pdf pdf_icon

WMS08P04TS

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D WMS08P03T1 uses advanced power trench technology that has D D been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance. S Features S S G V = -30V, I = -8A DS D SOP-8L R ... See More ⇒

 9.1. Size:764K  way-on
 wms08dp03ts.pdf pdf_icon

WMS08P04TS

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 WMS08DP03TS uses advanced power trench technology that has D2 been especially tailored to minimize the on-state resistance and yet S1 maintain superior switching performance. G1 S2 G2 Features SOP-8L V = -30V, I = -8A DS D R ... See More ⇒

 9.2. Size:846K  way-on
 wms08dh04t1.pdf pdf_icon

WMS08P04TS

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS08DH04T1 uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 7.5A DS D R ... See More ⇒

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Detailed specifications: WMS06N10TS, WMS06N15T2, WMS06P04T1, WMS08DH04T1, WMS08DN06TS, WMS08DP03TS, WMS08N06TS, WMS08P03T1, IRF640N, WMS090DNV6LG4, WMS090N04LG2, WMS090NV6LG4, WMS099N10LGS, WMS09DP03TS, WMS09N06TS, WMS09P02TS, WMS09P06TS

Keywords - WMS08P04TS MOSFET specs

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