WMS08P04TS - описание и поиск аналогов

 

WMS08P04TS - Аналоги. Основные параметры


   Наименование производителя: WMS08P04TS
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 19.5 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.031 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для WMS08P04TS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMS08P04TS технические параметры

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 wms08p04ts.pdf pdf_icon

WMS08P04TS

WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET D Description D D WMS08P04TS uses advanced power trench technology that has been D especially tailored to minimize the on-state resistance and yet maintain S superior switching performance. S S G Features SOP-8L V = -40V, I = -8A DS D R

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 wms08p03t1.pdf pdf_icon

WMS08P04TS

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D WMS08P03T1 uses advanced power trench technology that has D D been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance. S Features S S G V = -30V, I = -8A DS D SOP-8L R

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 wms08dp03ts.pdf pdf_icon

WMS08P04TS

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 WMS08DP03TS uses advanced power trench technology that has D2 been especially tailored to minimize the on-state resistance and yet S1 maintain superior switching performance. G1 S2 G2 Features SOP-8L V = -30V, I = -8A DS D R

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 wms08dh04t1.pdf pdf_icon

WMS08P04TS

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS08DH04T1 uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 7.5A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMS06N10TS , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , IRF640N , WMS090DNV6LG4 , WMS090N04LG2 , WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS .

 

 
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