WMS08P04TS
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMS08P04TS
Маркировка: S08P04S
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 3.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 8
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 30
nC
trⓘ -
Время нарастания: 19.5
ns
Cossⓘ - Выходная емкость: 110
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.031
Ohm
Тип корпуса: SOP-8L
Аналог (замена) для WMS08P04TS
WMS08P04TS
Datasheet (PDF)
..1. Size:785K way-on
wms08p04ts.pdf WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS08P04TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Ssuperior switching performance. SSGFeatures SOP-8L V = -40V, I = -8A DS DR
7.1. Size:764K way-on
wms08p03t1.pdf WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDWMS08P03T1 uses advanced power trench technology that has DDbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. SFeatures SSG V = -30V, I = -8A DS DSOP-8LR
9.1. Size:764K way-on
wms08dp03ts.pdf WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2WMS08DP03TS uses advanced power trench technology that has D2been especially tailored to minimize the on-state resistance and yet S1maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -8A DS DR
9.2. Size:846K way-on
wms08dh04t1.pdf WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS08DH04T1 uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 7.5A DS DR
9.3. Size:975K way-on
wms08n06ts.pdf WMS08N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS08N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 60V, I = 8A DS DR
9.4. Size:958K way-on
wms08dn06ts.pdf WMS08DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS08DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 60V, I = 8A DS DR
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