WMS099N10LGS MOSFET Datasheet: N-Ch, 100V, 12A. Full specification with pinout and replacement list

WMS099N10LGS Specs and Replacement

Type Designator: WMS099N10LGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 284 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: SOP8

WMS099N10LGS substitution

- MOSFET ⓘ Cross-Reference Search

WMS099N10LGS datasheet

..1. Size:747K way-on
wms099n10lgs.pdf pdf_icon

WMS099N10LGS 100V N-Channel Enhancement Mode Power MOSFET D Description D D D WMS099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. SOP-8L Features V =... See More ⇒

9.1. Size:746K way-on
wms090n04lg2.pdf pdf_icon

... See More ⇒

9.2. Size:979K way-on
wms090dnv6lg4.pdf pdf_icon

WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L ... See More ⇒

9.3. Size:772K way-on
wms09p02ts.pdf pdf_icon

WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET Description D D WMS09P02TS uses advanced power trench technology that has been D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = -20V, I = -9A DS D R ... See More ⇒