Справочник MOSFET. WMS099N10LGS

 

WMS099N10LGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMS099N10LGS
   Маркировка: 099N10LS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 57.5 nC
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 284 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: SOP-8L

 Аналог (замена) для WMS099N10LGS

 

 

WMS099N10LGS Datasheet (PDF)

 ..1. Size:747K  way-on
wms099n10lgs.pdf

WMS099N10LGS
WMS099N10LGS

WMS099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures V =

 9.1. Size:746K  way-on
wms090n04lg2.pdf

WMS099N10LGS
WMS099N10LGS

WMS090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS090N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.2. Size:979K  way-on
wms090dnv6lg4.pdf

WMS099N10LGS
WMS099N10LGS

WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8L

 9.3. Size:772K  way-on
wms09p02ts.pdf

WMS099N10LGS
WMS099N10LGS

WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -9A DS DR

 9.4. Size:687K  way-on
wms09dp03ts.pdf

WMS099N10LGS
WMS099N10LGS

WMS09DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS09DP03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1yet maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -9A DS DR

 9.5. Size:765K  way-on
wms09p06ts.pdf

WMS099N10LGS
WMS099N10LGS

WMS09P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -60V, I = -8.5A DS DSOP-8LR

 9.6. Size:783K  way-on
wms090nv6lg4.pdf

WMS099N10LGS
WMS099N10LGS

WMS090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS090NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

 9.7. Size:791K  way-on
wms09n06ts.pdf

WMS099N10LGS
WMS099N10LGS

WMS09N06TS 60V N-Channel Enhancement Mode Power MOSFET Description DDDWMS09N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 60V, I = 9A DS D R

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