WMS10DN04TS Specs and Replacement
Type Designator: WMS10DN04TS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: SOP8
WMS10DN04TS substitution
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WMS10DN04TS datasheet
wms10dn04ts.pdf
WMS10DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS10DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G1 maintain superior switching performance. S2 G2 Features SOP-8L V = 40V, I =10A DS D R ... See More ⇒
wms10dh04ts.pdf
WMS10DH04TS 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS10DH04TS uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 10A DS D R ... See More ⇒
wms10n04ts.pdf
WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMS10N04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 40V, I =10A DS D R ... See More ⇒
Detailed specifications: WMS090N04LG2, WMS090NV6LG4, WMS099N10LGS, WMS09DP03TS, WMS09N06TS, WMS09P02TS, WMS09P06TS, WMS10DH04TS, 8205A, WMS10N04TS, WMS119N10LG2, WMS11P02TS, WMS11P04T1, WMS12P03T1, WMS13N03T1, WMS13P04T1, WMS140DNV6LG4
Keywords - WMS10DN04TS MOSFET specs
WMS10DN04TS cross reference
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