FDS3672
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS3672
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 28
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 285
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
SO-8
FDS3672
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS3672
Datasheet (PDF)
..1. Size:266K fairchild semi
fds3672.pdf 
March 2003FDS3672N-Channel PowerTrench MOSFET100V, 7.5A, 22mFeatures Applications rDS(ON) = 19m (Typ.), VGS = 10V, ID = 7.5A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie
..2. Size:361K onsemi
fds3672.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. Size:827K cn vbsemi
fds3672.pdf
FDS3672www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-8
8.1. Size:205K fairchild semi
fds3670.pdf
January 2000PRELIMINARYFDS3670100V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.033 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Low gate charge (57 nC typ
9.1. Size:89K fairchild semi
fds3601.pdf
August 2001FDS3601100V Dual N-Channel PowerTrench MOSFETGeneral Description FeaturesThese N-Channel MOSFETs have been designed 1.3 A, 100 V. RDS(ON) = 480 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 530 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Fast switching spe
9.2. Size:277K fairchild semi
fds3692.pdf
September 2002FDS3692N-Channel PowerTrench MOSFET100V, 4.5A, 60mFeatures Applications rDS(ON) = 50m (Typ.), VGS = 10V, ID = 4.5A DC/DC converters and Off-Line UPS Qg(tot) = 11nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect
9.3. Size:88K fairchild semi
fds3612.pdf
March 2001 FDS3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.4 A, 100 V. RDS(ON) = 120 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 130 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe
9.4. Size:274K fairchild semi
fds3682.pdf
September 2002FDS3682N-Channel PowerTrench MOSFET100V, 6A, 35mFeatures Applications rDS(ON) = 30m (Typ.), VGS = 10V, ID = 6A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie
Datasheet: FDS2672
, STF2455
, FDS2672F085
, STF2454A
, FDS2734
, FDS3512
, FDS3572
, FDS3590
, IRFZ24N
, STF2454
, FDS3692
, STF06N20
, FDS3890
, FDS3992
, STE339S
, FDS4141
, FDS4141F085
.
