WMS13N03T1 Specs and Replacement
Type Designator: WMS13N03T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 267 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: SOP8
WMS13N03T1 substitution
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WMS13N03T1 datasheet
wms13n03t1.pdf
WMS13N03T1 30V N-Channel Enhancement Mode Power MOSFET D Description D D WMS13N03T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = 30V, I = 13A DS D R ... See More ⇒
Detailed specifications: WMS09P06TS, WMS10DH04TS, WMS10DN04TS, WMS10N04TS, WMS119N10LG2, WMS11P02TS, WMS11P04T1, WMS12P03T1, 2SK3878, WMS13P04T1, WMS140DNV6LG4, WMS140NV6LG4, WMS14DN03T1, WMS14P03T1, WMS15N03T1, WMS15P02T1, WMS175DN10LG4
Keywords - WMS13N03T1 MOSFET specs
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