WMS17P03TS Specs and Replacement
Type Designator: WMS17P03TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 698 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: SOP8
WMS17P03TS substitution
WMS17P03TS Specs
wms175n10hg4.pdf
WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features ... See More ⇒
wms175dn10lg4.pdf
WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1 D1 Description D2 D2 WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L Fea... See More ⇒
wms175n10lg4.pdf
WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features ... See More ⇒
Detailed specifications: WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , SKD502T , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 .
Keywords - WMS17P03TS MOSFET specs
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