WMS17P03TS Datasheet and Replacement. Cross Reference Search

WMS17P03TS Datasheet (PDF)

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WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR

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WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

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WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea

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WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

Datasheet: WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , IRF9540N , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 .