All MOSFET. WMS17P03TS Datasheet

 

WMS17P03TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMS17P03TS
   Marking Code: S17P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 3 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 17.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 146 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 698 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
   Package: SOP-8L

 WMS17P03TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMS17P03TS Datasheet (PDF)

 ..1. Size:769K  way-on
wms17p03ts.pdf

WMS17P03TS
WMS17P03TS

WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR

 9.1. Size:784K  way-on
wms175n10hg4.pdf

WMS17P03TS
WMS17P03TS

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.2. Size:977K  way-on
wms175dn10lg4.pdf

WMS17P03TS
WMS17P03TS

WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea

 9.3. Size:770K  way-on
wms175n10lg4.pdf

WMS17P03TS
WMS17P03TS

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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