All MOSFET. WMS17P03TS Datasheet

 

WMS17P03TS Datasheet and Replacement


   Type Designator: WMS17P03TS
   Marking Code: S17P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 17.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 146 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 698 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: SOP-8L
 

 WMS17P03TS substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMS17P03TS Datasheet (PDF)

 ..1. Size:769K  way-on
 wms17p03ts.pdf pdf_icon

WMS17P03TS

WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR

 9.1. Size:784K  way-on
 wms175n10hg4.pdf pdf_icon

WMS17P03TS

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.2. Size:977K  way-on
 wms175dn10lg4.pdf pdf_icon

WMS17P03TS

WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea

 9.3. Size:770K  way-on
 wms175n10lg4.pdf pdf_icon

WMS17P03TS

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - WMS17P03TS MOSFET datasheet

 WMS17P03TS cross reference
 WMS17P03TS equivalent finder
 WMS17P03TS lookup
 WMS17P03TS substitution
 WMS17P03TS replacement

 

 
Back to Top

 


 
.