WMS17P03TS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMS17P03TS
Маркировка: S17P03
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 17.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 146 nC
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 698 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
Тип корпуса: SOP-8L
Аналог (замена) для WMS17P03TS
WMS17P03TS Datasheet (PDF)
wms17p03ts.pdf
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WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR
wms175n10hg4.pdf
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WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures
wms175dn10lg4.pdf
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WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea
wms175n10lg4.pdf
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WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![WMS17P03TS](https://alltransistors.com/images/us.png)
![WMS17P03TS](https://alltransistors.com/images/es.png)
![WMS17P03TS](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100