SL05N06A Datasheet and Replacement
Type Designator: SL05N06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT223
SL05N06A substitution
SL05N06A Datasheet (PDF)
sl05n06a.pdf

SL05N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 5.0AD R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Powe
sl05n06z.pdf

SL05N06ZProduct SummaryFeatures Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m@10VD260V S1 5AD1 Low reverse transfer capacitance150m@4.5V Fast switching capability Avalanche energy specifiedApplicationD Power switching applicationSDGDSOT-89 top viewSchematic diagram05N06Z: Device code
sl05n10a.pdf

SL05N10AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100VDS I 5.0A D R ( at V =10V) 180 mohmDS(ON) GS R ( at V =4.5V) 300 mohmDS(ON) GSGeneral Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recoveryApplications Consumer electronic po
Datasheet: WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , IRF1407 , SL05N06Z , SL05N10A , SL1002B , SL100N03R , SL10N06A , SL10N10A , SL10P04S , SL120N03R .
History: SIR802DP-T1-GE3 | DH012N03I | MTE55N10FP | SFP830 | HM4410B | WMN25N70EM | KIA3510A-252
Keywords - SL05N06A MOSFET datasheet
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History: SIR802DP-T1-GE3 | DH012N03I | MTE55N10FP | SFP830 | HM4410B | WMN25N70EM | KIA3510A-252



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