All MOSFET. SL05N06A Datasheet

 

SL05N06A Datasheet and Replacement


   Type Designator: SL05N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223
 

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SL05N06A Datasheet (PDF)

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SL05N06A

SL05N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 5.0AD R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Powe

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SL05N06A

SL05N06ZProduct SummaryFeatures Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m@10VD260V S1 5AD1 Low reverse transfer capacitance150m@4.5V Fast switching capability Avalanche energy specifiedApplicationD Power switching applicationSDGDSOT-89 top viewSchematic diagram05N06Z: Device code

 9.1. Size:1612K  slkor
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SL05N06A

SL05N10AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100VDS I 5.0A D R ( at V =10V) 180 mohmDS(ON) GS R ( at V =4.5V) 300 mohmDS(ON) GSGeneral Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recoveryApplications Consumer electronic po

Datasheet: WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , IRF1407 , SL05N06Z , SL05N10A , SL1002B , SL100N03R , SL10N06A , SL10N10A , SL10P04S , SL120N03R .

History: 2SK2148-01R

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