SL12N100F MOSFET. Datasheet pdf. Equivalent
Type Designator: SL12N100F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 116 nS
Cossⓘ - Output Capacitance: 189 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
SL12N100F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL12N100F Datasheet (PDF)
sl12n100t sl12n100k sl12n100 sl12n100f.pdf
SL12N100Features Low gate charge Low C (typ 13pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast based on half bridge LED power suppliesAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS12 AI T
sl12n10.pdf
SL12N10 100V/12A N-Channel MOSFETFeatures Super high density cell design Product Summaryfor extremely low RDS(ON) VDS RDS(ON) MAX ID MAX Exceptional on-resistance and maximum DC current capability 160m@10VD2S1100V 12AD1180m@4.5VApplication Power Management in Note book DC/DC Converter D Load Switch LCD Display inverter DDGS
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