SL160N03R MOSFET. Datasheet pdf. Equivalent
Type Designator: SL160N03R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 142 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 845 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: PDFN5X6-8L
SL160N03R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL160N03R Datasheet (PDF)
..1. Size:1242K slkor
sl160n03r.pdf
sl160n03r.pdf
SL160N03RDescription This Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features PDFN5*6-8L V =30VI =160A DS D R = 1.5m @V =10V DS ON TYP GS R
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
