All MOSFET. SL160N03R Datasheet

 

SL160N03R Datasheet and Replacement


   Type Designator: SL160N03R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 845 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: PDFN5X6-8L
 

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SL160N03R Datasheet (PDF)

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SL160N03R

SL160N03RDescription This Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features PDFN5*6-8L V =30VI =160A DS D R = 1.5m @V =10V DS ON TYP GS R

Datasheet: SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T , SL12P03S , SL15N10A , IRFB31N20D , SL18N20 , SL18N50F , SL2016 , SL2026 , SL20N03 , SL20N10 , SL2102 , SL2192 .

History: IRFPG42 | IRFP4004 | SI2300BDS-T1-GE3 | MTP20N20E | FDPC8011S | IRF6894MPBF | ME3920D-G

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